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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1718 DESCRIPTION *With TO-3PL package *Complement to type 2SB1163 *Excellent linearity of hFE *Wide area of safe operation (ASO) *High transition frequency fT APPLICATIONS *For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector CONDITIONS VALUE 180 180 5 15 25 3.5 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 150 150 -55~150 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10A ;IB=1A IC=8A ; VCE=5V VCB=180V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=8A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 20 60 20 20 230 MIN TYP. 2SD1718 MAX 2.5 1.8 50 50 UNIT V V A A 200 MHz pF hFE-2 classifications Q 60-100 S 80-160 P 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1718 Fig.2 Outline dimensions (unindicated tolerance:0.50 mm) 3 |
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